RF Characterization of NiO and TiO2 Based Metal-Insulator-Metal (MIM) Diodes on Flexible Substrates

RF Characterization of NiO and TiO2 Based Metal-Insulator-Metal (MIM) Diodes on Flexible Substrates

Blog Article

This paper presents the fabrication and characterization of metal-insulator-metal (MIM) diodes on flexible substrates for RF and microwave circuit applications.Diodes using two types of insulators, titanium dioxide (TiO2) and nickel oxide (NiO), Childrens Tableware are investigated.These insulators are obtained using different oxidation techniques, i.e.

, in-situ oxidation for TiO2 and plasma oxidation for NiO.Asymmetric metal contacts (Ti-TiO2-Pd and Ni-NiO-Mo) are utilized to achieve nonlinear I-V characteristics.The fabricated diodes show strong non-linearity, high current densities, and low turn-ON voltage.The diodes show RF to dc rectification with near-ideal behavior and rectification sensitivity of 22 V/W (18 GHz) and 46 V/W (18 GHz) for TiO2 Buckles and NiO, respectively.

NiO-based diodes barrier shows higher current density and higher cutoff frequency in comparison with TiO2 as expected diodes due to thinner oxide and lower dielectric constant.The diodes also work well as frequency doublers over a wide frequency range of 1-4 GHz for TiO2 and 2-10 GHz for NiO-based diodes.Good dc and RF performance of diodes indicate that good quality oxide can be achieved on plastic substrates and MIM devices can provide a perfect solution for RF and microwave circuits on a flexible substrate.